Method of making a compliant integrated circuit package

ABSTRACT

A component incorporating a dielectric element such as a polymeric film with leads and terminals thereon is assembled with a semiconductor chip and bond regions of the leads are connected to contacts of the chip. At least one lead incorporates a plural set of connecting regions connecting the bond region of that lead to a plurality of terminals. One or more of the connecting regions in each such plural set are severed so as to leave less than all of the terminals associated with each such plural set connected to the contacts of the chip.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a Divisional of U.S. patent application Ser.No. 09/306,623, filed May 6, 1999 now U.S. Pat. No. 6,603,209, which isa Divisional of U.S. patent application Ser. No. 08/365,749, filed Dec.29, 1994 now U.S. Pat. No. 5,929,517, the disclosures of which arehereby incorporated by reference herein.

BACKGROUND OF THE INVENTION

The present invention relates, generally, to integrated circuitpackaging, and more particularly relates to methods and devices forpackaging microelectronic devices.

Microelectronic devices are typically comprised of one or more silicondie/dice having, at least in material part, a multitude of die bond padson a front surface, a chip body, an interconnection scheme to connectthe pads on the die to a supporting substrate and an encapsulant toensure that the die is protected from contaminants. The combination ofthese elements is generally referred to as a chip package. The specificfunction of this package is to protect the die from mechanical,electrostatic and environmental stresses while at the same timeproviding a thermal path for the heat dissipated from the at least onedie during use.

More specifically, chip packages must be able to accommodate for manyinherent microelectronic device problems, such as die power dissipation,mismatches in the thermal coefficients of expansion between the chip andits supporting substrate, and increasingly smaller die bond pad pitch,which ultimately allows smaller dies to be used and thus has thepotential to produce either smaller packages or more densely packedmulti-die packages so long as the interconnection scheme chosen canaccommodate the fineness of the pad pitch.

Microelectronic devices are typically connected to external circuitrythrough contacts on a surface of the chip. The device contacts aregenerally either disposed in regular grid-like patterns, substantiallycovering the front surface of the chip (commonly referred to as an “areaarray”) or in elongated rows extending parallel to and adjacent eachedge of the chip front surface. The various prior art processes formaking the interconnections between such microelectronic devices andtheir supporting substrates use prefabricated arrays or rows of leads,discrete wires, solder bumps or combinations thereof. For example, in awirebonding process, the chip may be physically mounted on a supportingsubstrate. A fine wire is fed through a bonding tool. The tool isbrought into engagement with the contact on the chip so as to bond thewire to the contact. The tool is then moved to a connection point of thecircuit on the substrate, so that a small piece of wire is dispensed andformed into a lead, and connected to the substrate. This process isrepeated for every contact on the chip. The wire bonding process mayalso be used to connect the die bond pads to lead frame fingers that arethen connected to the supporting substrate.

In a tape automated bonding (“TAB”) process, a dielectric supportingtape, such as a thin foil of polyimide is provided with a hole slightlylarger than the chip. An array of metallic leads is provided on onesurface of the dielectric film. These leads extend inwardly from aroundthe hole towards the edges of the hole. Each lead has an innermost endprojecting inwardly, beyond the edge of the hole. The innermost ends ofthe leads are arranged side by side at spacing corresponding to thespacing of the contacts on the chip. The dielectric film is juxtaposedwith the chip so that the hole is aligned with the chip and so that theinnermost ends of the leads will extend over the front or contactbearing surface on the chip. The innermost ends of the leads are thenbonded to the contacts of the chip, typically using ultrasonic orthermocompression bonding. The outer ends of the leads are connected toexternal circuitry.

In a “beam lead” process, the chip is provided with individual leadsextending from contacts on the front surface of the chip outwardlybeyond the edges of the chip. The chip is positioned on a substrate withthe outermost ends of the individual leads protruding over contacts onthe substrate. The leads are then engaged with the contacts and bondedthereto so as to connect the contacts on the chip with contacts on thesubstrate.

More recently, flip chip configurations have been used. In flip chipconfigurations, a solder ball is deposited on top of each of the chipcontacts and then abutted against respective substrate contacts. Thesolder balls are then reflowed to provide an electrical connectionbetween the chip and the substrate.

The rapid evolution of semiconductor art in recent years has created acontinued demand for progressively greater numbers of contacts and leadsin a given amount of space. An individual chip may require hundreds oreven thousands of contacts, all within a very small area and many timeswithin the area of the front surface of the chip package. For example, acomplex semiconductor chip package in current practice may have a row ofcontact pads spaced apart from one another at center-to-center distancesof 0.15 mm or less and, in some cases, 0.10 mm or less. These distancesare expected to decrease progressively with continued progress in theart of semiconductor fabrication. Wire bonding can currently onlyaccommodate a die pad pitch of approximately 100 pm and TAB bondingallows only a pad pitch or about 70-80 pm. If a smaller pad pitch werepossible in production, it would allow the die size to be reduced for“pad limited designs where the die perimeter is required to be largeenough to fit all of the bond pads.

Further, with such closely-spaced contacts, the leads connected to thechip contacts, must be extremely fine structures, typically less than 50pm wide. Such fine structures are susceptible to damage and deformation.With closely spaced contacts, even minor deviation of a lead from itsnormal position will result in misalignment of the leads and contacts.Thus, a given lead may be out of alignment with the proper contact onthe chip or substrate, or else it may be erroneously aligned with anadjacent contact. Either condition can yield a defective chip assembly.Errors of this nature materially reduce the yield of good devices andintroduce defects into the product stream. These problems areparticularly acute with those chips having relatively fine contactspacing and small distances between adjacent contacts.

Many of the prior art techniques for attachment further run intoproblems because of the thermal expansion mismatch between the materialcomprising the microelectronic device and the material comprising thesupporting substrate. In other words, when heat is applied to themicroelectronic device/substrate combination, they both expand; and whenthe heat is removed, the device and the substrate both contract Theproblem that arises is that the device and the substrate expand andcontract at different rates and at different times, thereby stressingthe interconnections between them. This directly affects the reliabilityof these connection schemes.

It has been proposed to provide a pressure clamped TAB structure wherethe outer leads have bumps which can be pressure clamped to respectivecontacts on the supporting substrate. A compliant pad is then placedover the TAB leads to help hold each of the bumps into electricalcontact with corresponding lead contacts on the substrate. However, thecompliant pad will eventually take a permanent set, thereby reducing thereliability of the contact force over time. An alternate TAB solutionput forth involves replacing the outer lead bond pads of the TAB chipcarrier, which connects to the substrate, with an area array of solderballs. The die is then connected to the carrier by means of solderbumps, wire bonds, or TAB inner lead bond pads. The problem here is thatthe solder balls undergo mechanical stress due to differential thermalexpansion of the TAB chip carrier relative to the supporting substratethereby causing cracking of the solder balls reducing their reliability.

Thermal mismatch issues will be more significant as multiple chipmodules grow in popularity. Typically, as more dice are packagedtogether, more heat will be dissipated by each package which, in turn,means the package will expand to a greater extent thereby furtherstressing the interconnections. Effective package heat dissipationschemes have thus become increasing important. Typical package coolingschemes include heat sinks and small air fans which are applied oraffixed to the back side of the chip body, which is further typicallymade of ceramic or plastic. One problem with these solutions is that theback layer of the chip package body, to varying degrees, acts as athermal barrier between the die and the thermal cooling deviceinhibiting good thermal conduction to the exterior surface of thepackage.

Further, impedance, inductance and capacitance problems begin toseriously degrade a chip package's performance as the pad pitch becomesfiner and the clock speed of a chip is increased. Factors such as thelength of interconnection wires and the crosstalk between the chip'sinterconnections also need to be addressed when a chip package is beingdesigned for the same reason.

To be commercially viable, the aforementioned problems must be solved ina manner which respects the small package size, multichip constraints,fine die bond pad pitch, thermal problems, compliancy problems,electrical problems and in addition must be a cost effective IC package.

Thus, despite the substantial time and effort devoted heretofore to theproblems associated with mounting and connecting of microelectronicdevices, there are still been unmet needs for improvements in suchprocesses and in the equipment and components used to practice them.

SUMMARY OF THE INVENTION

The present invention provides a method and apparatus for providing aintegrated circuit package while substantially obviating thermal,compliancy and interconnection problems.

More specifically, one embodiment of the present invention provides amethod of fabricating a compliant microelectronic device package and anassociated apparatus, wherein a flexible, dielectric layer having on afirst surface a plurality of conductive leads which are eachelectrically coupled at a first end to a conductive pad on the firstsurface of the dielectric layer. A second end of each conductive lead isfurther coupled to a first surface of a removable film across a bondinggap. A first surface of a compliant layer is coupled to a second surfaceof the dielectric layer and the removable film is supported atop a firstsurface of an IC die. Each conductive lead is then detached and bondedto a respective juxtaposed die bond pad. At this point the removablefilm is no longer attached by the conductive leads and may be removedfrom the first surface of the die creating a die window. A secondsurface of the die and a second surface of the compliant layer is nextattached to an interior surface of a protective structure, such as aheat spreading enclosure. A liquid encapsulant is then introducedbetween the die and the dielectric layer and is cured at a suitabletemperature.

In an alternate embodiment, the removable film from the precedingembodiment, comprising a second flexible dielectric layer, can becoupled to the first surface of the die using a second compliant layer.The second dielectric layer further having a plurality of the secondconductive leads each electrically coupled at a first end to at leastone second conductive pad also coupled to the first surface of thesecond dielectric layer. A second end of each of the second conductiveleads is then coupled to the first surface of the first dielectric layeracross the bonding gap. Each of the conductive leads may then bedetached within or near the bonding gap and bonded to respectivejuxtaposed die bond pads on to the first surface of the die. Thisembodiment thus provides a compliant microelectronic package havingperimeter and center conductive pads.

These embodiments can also make use of a specific point of detachment oneach of the conductive leads within or near the perimeter of the bondinggap to better determine the point of detachment of the lead. Thisembodiment may further have a conductive layer coupled to the secondsurface of the dielectric layer, between the dielectric layer and thecompliant layer. This conductive layer can be used as a ground layer ora voltage reference layer and can be selectively coupled to any of theconductive pads through a conductive via through the thickness dimensionof the dielectric layer. The conductive layer further helps to shieldelectrical transients between the contact pads when the device is inuse. A solder mask, coupled to the first surface of the first and seconddielectric layer, may also be used to electrically shield the conductiveleads and cover the die window, but not shield the conductive pads. Asmall hole in the solder mask, aligned with the bonding gap, can furtherbe used to introduce the liquid encapsulant between the die and thesolder mask. The solder mask also performs the function of preventingthe liquid encapsulant from overflowing onto the conductive pads.

A further embodiment of the present invention includes a method offabricating a compliant microelectronic device package and an associatedapparatus having its conductive leads and pads on alternate surfaces ofa dielectric layer. More specifically, this embodiment includesproviding a first and a second flexible dielectric layer lying in acommon plane with a space between them defining a bonding gap. The firstand second dielectric layers respectively having on a first surface afirst and second conductive pad and on a second surface a first andsecond conductive lead. The first and second conductive pads are coupledrespectively to the first and a second conductive leads through aconductive via in the first and second dielectric layers. A firstsurface of a third and fourth flexible, dielectric layer are coupledrespectively to the second surface of the first and second dielectriclayers, wherein an end of the second conductive lead is attached betweenthe first and third dielectric layers such that the second conductivelead bridges the bonding gap. A third conductive lead is then coupled toa second surface of the third dielectric layer and coupled to the firstconductive lead through a conductive via extending from the first to thesecond surface of the third dielectric layer. An end of the thirdconductive lead is further coupled between the second and fourthdielectric layers such that the third conductive lead bridges thebonding gap. A first and second compliant layer, each having a first andsecond surface, wherein the first surface of the first and secondcompliant layer are coupled to a respective second surface of the thirdand fourth dielectric layers. A die having a first and second surfaceand a plurality of die bond pads is next coupled on its first surface toa second surface of the second compliant layer, and the second surfaceof the first compliant layer and the second surface of the die areattached to an interior surface of a protective structure. The secondand third conductive leads are then detached and bonded to a respective,juxtaposed die bond pad, and a liquid encapsulant is introduced betweenthe die and the dielectric layer and cured.

The attached ends of the second and third may alternately be sandwichedbetween the respective dielectric layers or the leads may be coupled toone of the opposing dielectric layers, either way holding them in placeover the bond gap.

A conductive layer may be added to the first surface of the first andsecond dielectric layers and selectively coupled to the first and secondconductive pads, thereby providing for a ground of reference voltageplane. A solder mask may further be affixed atop the conductive layer sothat the leads are protected from electrically shorting but the contactpads are exposed so they may be connected to the contacts on asupporting substrate. A hole may also be provided from the exposedsurface of such a solder mask to the second surface of the conductivelayer and aligned over the bonding gap so that the liquid encapsulantmay be injected between the die and the conductive layer.

The foregoing and other objects and advantages of the present inventionwill be better understood from the following Detailed Description of aPreferred Embodiment, taken together with the attached figures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a side view of one embodiment according to the presentinvention.

FIG. 2 shows a side view of a flex circuit according to the presentinvention.

FIG. 3 shows a chart comparing various package characteristics accordingto the present invention.

FIG. 4 shows a before bonding side view of a flex circuit and dieaccording to the present invention.

FIG. 5 shows a before bonding top view of a flex circuit and dieaccording to the present invention.

FIG. 6 shows a magnified before bonding top view of a flex circuit anddie according to the present invention.

FIG. 7 shows a before bonding perspective view of a bonding tool andunbonded leads according to the present invention.

FIG. 8 shows a perspective view of the leads after bonding according tothe present invention.

FIG. 9 shows an encapsulation step according to the present invention.

FIGS. 10A-B show a top view of an alternate embodiment havingprogrammable discretionary wiring according to the present invention.

FIG. 11 shows a top view of a further alternate multiple die embodimentaccording to the present invention.

FIG. 12 shows a top view of a still further alternate embodimentaccording to the present invention.

FIG. 13 shows a magnified top view of a still further alternateembodiment having both fan in and fan out leads according to the presentinvention.

FIG. 14 shows a perspective view of a still further alternate embodimenthaving a ground layer according to the present invention.

FIG. 15 shows a side view of the embodiment shown in FIG. 12 accordingto the present invention.

FIG. 16 shows a side view of an still further alternate embodimenthaving multiple wiring levels coupled to the die bond pads according tothe present invention.

DETAILED DESCRIPTION

FIG. 1 shows a side view of one embodiment of the present invention. Aflexible, but substantially inextensible, film circuit element (or “flexcircuit) 100, preferably formed from a polymeric material such asKapton™, of an approximate thickness between 25 and 100 microns is usedas a flexible, intermediate substrate having lithographically pre-formedflexible, conductive leads 110 and bumps 120 (which may be comprised ofplated bumps, solder balls, etc.) on a first surface. The conductiveleads 110, which are typically between 20 to 30 microns thick, connect aplurality of bumps 120 to at least one respective die bond pad, as isdiscussed in greater detail hereinafter. The flex circuit 100 furtherhas a bond window 130 through which the conductive leads 110 areattached to the die bond pads (not shown) on the front surface of the atleast one die 140. A back surface of the die 140 is coupled to aninterior surface of a protective structure 150 generally using a snapcure adhesive 160 or another suitable method for attaching the die 140to the protective structure 150. The protective structure 150 furtherhas a shelf section 155 encircling the die to provide support for thebumps 120.

A compliant layer 170, typically an elastomeric pad, is placed betweenand coupled to a second side of the flex circuit 100 and the front sideof the shelf section 155 of the protective structure 150 to accommodatefor the temperature coefficient of expansion mismatch which occurs afterthe bumps are attached to a supporting substrate, such as a printedwiring board, and the die 140 begins to expand at a different rate thanthe supporting substrate due to the die's dissipation of heat duringoperation. The open area in the interior of the protective structure 150is filled with an elastomeric encapsulant 180 to protect the die 140from contamination due to dust, moisture or the like, as is disclosed inmore detail in the commonly owned U.S. patent application Ser. No.08/246,113, filed May 19, 1994, now U.S. Pat. No. 5,663,106. A flexibleprotective dielectric layer 190 is placed over the first side of theflex circuit 100 electrically isolating the conductive leads 110, butleaving the bumps 120 50 that they may be electrically coupled to asupporting substrate. Dielectric layer 190 further extends across thebond window 130.

Referring now to FIG. 2, the process begins by lithographically formingthe flexible, conductive leads 110 on a first surface of the flexcircuit 100 thereby coupling the leads 110 between the bumps 120 on afirst end of the lead 110 and a removable flex film structure 210 on asecond end of the lead 110. The bumps 120 are preferably comprised ofnickel or copper of approximately 90 microns in height and 300 micronsin diameter. Typically, a one micron thick gold (or gold cobalt alloy)coating will further be flash plated on the surface of each of the bumps120 to protect the bumps from oxidation and to enhance the bonding ofthe bumps to a supporting substrate.

The flex film 210 is similar to flex circuit 100 in that it is typicallycomprised of a flexible, substantially inextensible film circuit elementformed from a polymeric material such as Kapton™, and is attached to asecond end of lead 110. In effect, the flex film 210 is an island thatis attached to and completely supported by the leads 110 which aregenerally placed on all four sides of the flex film 210. Thisarrangement creates a bonding gap 260 between the flex circuit 100 andthe flex film 210. In practice, the flex film 210/bonding window 130structure may be created by laser ablating or punching a “picture frame”portion from flex circuit 100.

The compliant layer 170, which is typically made of an elastomermaterial such as the Dow Corning silicone elastomer 577 known as“Silgard®,” is next adhered to the second surface of the flex circuit100 and the flex film 210 typically by conventional stencil printingtechniques. The silicone elastomer used in the preferred embodiment isfilled with about 5-10% of fumed silica in order to obtain a stiffconsistency that allows the stenciled layer to retain its shape afterthe stencil is removed. The fumed silica also improves the thermalconductivity of the elastomer and further reduces the thermalcoefficient of expansion of the elastomer. The silicone is then cured ata suitable temperature.

Preferably, there is a sufficient number of bumps 120 so that at leastone bump 120 is provided for each die bond pad 200. If a pad limited dieis assumed, Table I provides typical bump configuration information. Thestandard bump array size may thus be chosen from Table I so that a largenumber of applications may be supported with a minimum number of sizeand tool configurations.

TABLE 1 Grid Bonding Rows No. of % Bump Bonding Window size Die SizeArray Window Deep Bumps Coverage 1.0 mm 1.27 mm 100 μm 80 μm 12 × 12 6 ×6 3 108 75 6 mm 7.6 mm 2.7 mm 2.2 mm 13 × 13 7 × 7 3 120 71 7 8.9 3.02.4 14 × 14 8 × 8 3 132 67 8 10.2 3.3 2.6 15 × 15 9 × 9 3 144 67 9 11.43.6 2.9 16 × 16 8 × 8 4 192 75 8 10.2 4.8 3.8 17 × 17 9 × 9 4 208 72 911.4 5.2 4.2 18 × 18 10 × 10 4 224 69 10 12.7 5.6 4.5 19 × 19 11 × 11 4240 66 11 14 7.0 5.6 20 × 20 10 × 10 5 300 75 10 12.7 7.5 6.0 22 × 22 12× 12 5 340 80 12 15.2 9.6 7.7 24 × 24 14 × 14 5 380 63.7 14 17.8 10.88.6 26 × 26 14 × 14 6 480 71 14 17.8 12.8 9.6 28 × 28 14 × 14 6 528 6716 20.3 14.7 11.8 30 × 30 18 × 18 6 576 67 18 22.9 16.1 12.9

Taking the first row of entries in Table I as an example, a 12×12 gridarray provides 12 rows of 12 bumps each for a total of 144 bumps. Sincethe flex circuit has a bonding window for the die, the number of bumpswhich would have been included had the bonding window not been providedmust be subtracted from the total number of bumps, i.e., for a bondingwindow which will take up an area that would have provided a 6×6 bumpgrid array, 36 bumps must be subtracted from the 144 bump total givenabove. Thus, in this example, 108 bumps in three rows encircle acentrally located bonding window. This corresponds to a 75% coverage ofthe bump grid array on the flex circuit. If the bumps, in this example,are on a 1.0 mm pitch, the bonding window may be approximately 6 mm oneach side, assuming a square bonding window. Further assuming a 100˜tmdie bond pad pitch on a single square die, the die may be approximately2.7 mm on a side allowing for a good amount of room to bond to the diebond pads given the difference between the bonding window size and thedie size. Given this die geometry, 27 die bond pads per side willresult, further resulting in a total of 108 die bond pads for the squaredie in this example. This provides one bump per die pad. While thenumber of allowable pins on the periphery of a die increases fairlylinearly with die size, the corresponding bonding window size and numberof rows of bumps relative to the number of pins on the die is notlinear, as shown in FIG. 3. As stated earlier, the values shown in TableI are exemplary only and should not be construed as a limitation on thepresent invention.

Referring now to FIGS. 4-8, the assembly shown in FIG. 2 is next mountedto the die 140. In FIG. 4, the die 140 is first placed with the diebonding pads 200 pointing upward in an aligning device 250, such as avacuum platen/support post combination, which positions and aligns thedie 140 in the x, y, z and 0 directions. The assembly shown in FIG. 2 isthen placed over the top of the aligning device 250 so that projections270 on the aligning device 250 may provide support for the flex circuit100 and allow the flex film 210 to rest atop the center of the die 140.The compliant layer 170 further supports the flex circuit 100 and theflex film 210 and maintains the conductive leads 110 at a fixed heightabove the die's surface. Each die bond pad 200 is thus aligned beneath arespective conductive lead 110.

FIG. 5 shows a bottom view of the embodiment shown in FIG. 4 before theconductive leads 110 are bonded to the die bond pads 200. As describedabove, each conductive lead 110 is fixedly held in place on either sideof the bonding gap 260 between the flex circuit 100 and the flex film210 such that a portion of each lead 110 is suspended above a respectivedie bond pad 200 in the bonding gap. Alternately, each of the conductiveleads 110 may be connected to a common center structure coupled to thefirst surface of the flex film 210 to provide added adherence of theleads 110 to the flex film 210 which, in turn, aids in bonding the leads110 to the die bonding pads 200, described in greater detail below. Apreferred embodiment of the invention also includes the holding straps215 which provide a mechanical means to better secure the flex film 210in place when the leads 110 are being bonded to the die bond pads 200.The holding straps 215 may be secured to any portion of the flex circuit100 and removable film 210 that will provide the added bonding supportwithout electrically shorting the leads 110. Further, the holding straps215 may be comprised of a conductive material, similar to how the leads110 are formed, or the straps 215 may be formed of a dielectricmaterial, which helps ensure the straps 215 do not electrically shortthe leads 110. After the leads have been bonded (as described in greaterdetail below), the holding straps 215 may be removed.

FIG. 6 shows a magnified view of FIG. 5. Each conductive lead 110 has ahighly conductive joining layer (not shown), such as a 2.5 to 5 micronthick layer of 99.99% gold or gold plated on nickel, which may bedisposed on the side of the lead 110 facing the die bonding pad 200 ormay extend completely around the conductive lead 110 within the bondinggap between the flex circuit 100 and the flex film 210. Alternately, theentire conductive leads 110 can be comprised of gold or a gold alloy. Asshown in FIG. 3, each conductive lead 110 further has a detachment point230, typically positioned within the bonding gap, which facilitatesfracture of the lead. This detachment point 230 can also be located justinside of the perimeter of the flex film 210. Although the detachmentpoint 230 is shown in FIG. 4 as a notched element, the detachment point230 may also be accurately thought of as simply a “weak” point in theconductive lead 110 which allows for the fracture of the lead at theweak point The detachment point 230 can be created by any suitablemeans, such as selectively plating or etching the lead, scoring thelead, creating a ‘thin area in the lead either in width or depth or notcoupling the highly conductive layer to a small portion of theconductive lead within the bonding gap. This detachable lead feature isdescribed in greater detail in commonly owned U.S. patent applicationSer. No. 07/919,772, filed on Jul. 24, 1992.

Referring now to the perspective drawing in FIG. 7, each flexible,conductive lead 110 is separated at its detachment point 230 and benttowards the die bonding pads 200 until the surface of the highlyconductive joining layer contacts the die bonding pads 200 of die 140.Thus, the bonding gap 260 must be sufficiently large to allow for thethickness of the compliant layer. As stated above, the portion of eachconductive lead 110 within the bonding gap 260 is supported during thebonding phase on one side by the flex circuit 110, which in turn issupported by the compliant layer 170 and by the projections 270 of thealigning device 250. Each lead is supported on the other side of thebonding gap 260 by the flex film 210, the compliant layer 170 and thedie 140. Typically, the bonding action is accomplished by using abonding tool 240 having an elongated groove in its bottom surface whichis positioned above each contact so that the groove extends in apre-selected groove direction and extends across the top of a contactThe connection sections of the leads extend generally parallel to thegroove direction, so that when the bonding tool is advanced downwardlyto engage the lead 110, the connection section of each lead is seated inthe groove. If the lead 110 is slightly out of alignment with thegroove, the lead 110 will be moved in lateral directions, transverse tothe groove, until it seats in the groove and thus becomes aligned withthe die bonding pads 200. The bonding tool described herein is morefully disclosed in commonly owned U.S. patent application Ser. No.08/096,700, filed Jul. 23, 1993, now U.S. Pat. No. 5,390,844.

FIG. 8 shows a perspective drawing of each conductive lead 110 after ithas been separated at its detachment point 230 and bent toward the diebonding pad 200. The leads 110 are then attached to the die bonding pads200 by any suitable means, such as ultrasonic, thermosonic orcompression bonding. The actions of detaching, bending and attaching theleads 110 are all typically performed with the bonding tool 240, shownin FIG. 7. After each of the conductive leads have been separated fromthe flex film 210 at their detachment points and bonded to theirrespective die bonding pad 200 on die 140, the flex film 210 is nolonger attached and may simply be removed. If the holding straps 215 areused, they will be removed at the same time by breaking or peeling eachstrap off near the edge of the bonding gap 260 nearest flex circuit 110.At this point, the die 140 is attached to the flex circuit by each ofthe bonded conductive leads 110.

The flexible, protective dielectric cover layer (or “solder mask”’) 190in FIG. 1 is coupled to the first surface of the flex circuit and istypically between 25-50 pm thick. The solder mask 190 is furthertypically composed of a polyimide, acrylic or epoxy sheet havingpreformed holes to allow the bumps 120 to extend therethrough.Preferably, the solder mask is vacuum laminated to the top layer of thesemiconductor chip assembly and covers the entire first surface of theflex circuit including the bonding window 130, except for the bumps 120.Alternately, a solder mask 190 may be coupled to the entire circuit areaof the flex circuit 100. Holes corresponding to the bumps 120 may thenbe created by lithographically exposing and developing the solder masksuch that the bumps 120 extend therethrough. Preferably, anencapsulation hole is made in the solder mask 190 so that elastomericencapsulant may be disposed within the open indentation area of theprotective structure, as described below. The elastomeric encapsulant istypically cured prior to any step of exposing the solder mask to revealthe bumps 120 so that the bumps do not become contaminated by theencapsulant.

A protective structure 150 is next placed between the back surface ofthe die 140 and the aligning device 250 and the die is coupled to theinterior surface of the protective structure 150 typically using a snapcure, thermally conductive die attach adhesive, as described above inreference to FIG. 1. It should be noted that the protective structuremay also be coupled to the structure shown in FIG. 2 prior to thebonding step. The protective structure 150 performs three functions.First, it protects the die and the flex circuit Second, the protectivestructure 150 is used to conduct heat from the back of the die 140 tothe surrounding environment; and third, the shelf section 155 providessupport for the bump grid array when it is attached to a supportingsubstrate. For thermal transfer purposes, the protective structure 150optimally is comprised of a highly conductive material, such as copper,copper-tungsten, aluminum or aluminum nitride among others. Further, theprotective structure 150 is directly attached to the back surface of thedie 140 to aid in the conduction of heat from the die through theprotective structure 150. Because the die 140 will heat up more quicklythan the protective structure 150, the preferred embodiment of theinvention uses a protective structure 150 which has a thermalcoefficient of expansion (TCE) as closely matched to the TCE of the die140 as possible while still retaining the structure's 150 thermaltransfer properties. Because the protective structure 150 is directlyattached to the back surface of the die 140, matching the TCEcharacteristics allows the protective structure 150 to expand andcontract as the die expands and contracts. Alternately, a conductivegrease could be substituted for the snap cure adhesive to add compliancybetween the protective structure 150 and the die 140 while stillmaintaining a good thermal path to dissipate the die's heat

The shelf section 155 of the protective structure 150 is coupled to thecompliant layer 170 and must further have sufficient rigidity to providethe needed support for the bump grid array. The shelf section may becoupled using a snap cure adhesive or a tacky elastomer film, oftypically the same material the complaint layer is composed of, may beprovided on the top surface of the compliant layer 170 and cured afterthe shelf section 155 is attached, so as to bond the shelf section 155to the compliant layer 170.

Referring now to FIG. 9, the open area, defined by the protectivestructure 150, the compliant layer 170 and the solder mask 190, providesa bounded encapsulation area. The encapsulant 180 performs the functionof protecting the die 140 from contamination due to dust, moisture orthe like, as is discussed above in reference to FIG. 1. Typically, aliquid encapsulant 180, such as the complaint elastomeric material usedfor the complaint layer 170, is dispensed into the open area by anencapsulant filled injection head 220 through the hole in the protectivelayer. Solder mask 190 substantially prevents the encapsulant fromcontacting or affecting the conductivity of the bumps 120. The vacuumplaten 250 holding the protective structure 150 may be heated to between1600° C. and 1800° C. in order to cure the encapsulant 180 sufficientlyto prevent its running out of the hole in the solder mask 190.Preferably, the hot platen 250 also cures the adhesive coupling the die140 to the protective structure 150 and the compliant layer 170 to theshelf section 155 at the same time as it cures the encapsulant 180. Atthis point, the microelectronic device is complete and may be removedfrom the vacuum platen 250.

FIG. 10A shows a bottom view of an alternate embodiment of the presentinvention in which the conductive leads 300 may connect more than oneterminal 310 to the same die bond pad 320. Thus, a multiply-connectedlead 300′ has a bond region 333 which is aligned with a bond window 301in the dielectric element 337. Bond region 333 is adapted for connectionto the chip contact, also referred to as a die bond pad, 320. The bondregion 333 is connected to two terminals 310 a and 310 b through twoconnecting regions 335 a and 335 b, shown in magnified view in FIG. 10B.These two connecting regions 335 a and 335 b constitute a plural set ofconnecting regions. The dielectric film 337 has a disconnection window331, and the connecting regions 335 a and 335 b extend across thisdisconnection window. Thus, the connection regions 335 a and 335 b canbe severed selectively by advancing a tool 340 so as to engage theconnection region which is to be disconnected and by forcing the toolinto the disconnection window. As shown in the drawing, the connectionregions may have weak points 341 to facilitate such severance.Alternatively, the connection regions may be selectively disconnectedusing etching or scribing techniques generally known in the art toelectrically disconnect one of the bumps from the die bond pad bycreating a non-conductive region.

FIG. 11 shows a bottom view of a multi-die embodiment of the presentinvention in which a plurality of dies (350/360/370) may be mounted tothe same flex circuit 380 and combined into a single package. In thisembodiment, the flex circuit 380 has a discrete bonding window(355/365/375) for each die and each die is coupled to the conductiveleads 390 in the same detachable lead/bonding tool manner as describedabove in reference to FIGS. 4-8. This embodiment further shows that theconductive leads 390 may be used to interconnect die bonding pads on thesame die or between multiple dies.

Referring now to the alternate embodiment of FIG. 12, the assemblyincludes a first flex circuit 450, similar to the flex circuit 100discussed above, and a second flex circuit 400. Flex circuit 400 issimilar to the removable flex film structure 210 shown in FIG. 2 in thatit is disposed within the central aperture creating a bonding gap 430between the two flex circuits (400/450). A plurality of plated or solderbumps 410/490 are positioned on each of the flex circuits and areattached to the die bond pads 460 through the bonding gap 430 throughthe use of flexible leads 440, described earlier. The addition of thesecond flex circuit 400 replaces at least a portion if not all of thebumps removed by the bonding window shown in FIG. 1 and described inconjunction with the second column of Table I. This embodiment allows agreater number of bumps 410 on the front surface of the chip package;and thus, a greater number of die bond pads 460 along the periphery ofthe die 470. This embodiment also provides further bump 410 to die bondpad 460 selectability.

As can be better seen in FIG. 13's magnified view of FIG. 12, the samemethod of attaching the first flex circuit to the die bond pads,described in reference to FIGS. 4-8, can be used to attach the bumps 410on the second flex circuit 400 to the die bond pads 460. The conductiveleads 440 are coupled on either side of the bonding gap 430 to the firstsurface of the first and second flex circuits (450/400) such that aportion of the lead 440 is suspended over the bonding gap 430. Thedetachment point 480 is placed on the far side of the bonding gap 430relative to the bump that is to be electrically connected to itsrespective die bond pad. Alternately and expanding upon the conceptshown in FIGS. IOA and 108, a conductive lead 440 having dual detachmentpoints 485A/4858 can be provided across the bonding gap 430 so that thebonding tool, described above, may selectively couple one of the bumps(410/490) to the die bond pad 460 while simultaneously ensuring that theother bump (410/490) will not be electrically connected to the same diebond pad 460. The localized stress placed on one of the dual detachmentpoints, for example point 485A, by the bonding tool will cause it toseparate the detachment point connection 485A before the lead's otherdetachment point 4858 is substantially affected. It should be noted thatthe second flex circuit feature shown in FIGS. 12-13 can also be usedwith the multi-die embodiment shown in FIG. 11 and described above.

FIG. 12 further shows an alternate protective structure 500 having asubstantially flat back surface across the entire chip package. Thisembodiment gives added rigidity, and thus added support, for theopposingly positioned bumps 490. This embodiment further better spreadsthe heat dissipated from the die throughout the entire chip package;however, the structure 500 will also retain that heat longer than theprotective structure 150 shown in FIG. 1 because of the structure's 500greater mass. For this reason, a conductive grease may be used in someapplications to mate the back surface of the die 470 to the protectivestructure 500 to give the connection added compliancy. The back surfaceof the die 470 directly attaches to the interior surface of theprotective structure 500 to aid in the conduction of heat from the backsurface of the die 470 through the structure 500. Likewise, theprotective structure 500 is comprised of a highly conductive materialand further has a TCE which is matched as closely to the die's TCE aspossible to also aid in the heat conduction away from the die 470 and tolimit the problems encountered when a die expands more quickly than itsattached protective structure. This embodiment's substantially flat backsurface also allows a larger, conventional heat sink to be attached thandoes the protective structure 150 shown in FIG. 1. In another alternateembodiment, the protective structure can be in the form of asubstantially flat ring surrounding the die and supporting the bumpswithout enclosing the back surface of the die (similar to having justthe shelf section 155 of the protective structure 150 shown in FIG. 1).This embodiment would allow a heat sink/spreader to be attached directlyto the back surface of the die thereby improving the transfer of heatfrom the die to the heat sink.

FIG. 12 further provides an alternate compliant layer. The complaintlayer shown in FIG. 12 is comprised of elastomeric pads 510 which may bestenciled and cured on the second surface of the flex circuits and maybe comprised of a silicone elastomer such as “Silgard®.” The pads 510are positioned beneath or around each of the bumps (410/490) to provideadequate support for the bumps when they are mated to the contacts on asupporting substrate, such as a printed wiring board. However, thepreferred embodiment also provides sufficient support at the edge of thebonding gap to provide support during the lead detachment/bonding steps.The area between these elastomeric pads may be filled with liquidencapsulant that is cured and controlled as described above in referenceto FIG. 9. Alternately, the entire compliant/encapsulation layer betweenthe two flex circuits and the die/protective structure may be formedthrough the injection molding process described above in connection withFIG. 9.

Referring now to FIG. 14, an alternate embodiment of the presentinvention further includes a ground plane 600 overlying and coupled tothe first surface of the flex circuit 620. The ground plane 600 is usedto electrically ground selective bumps 630 which are coupled to theconductive pads 640 and further has the combined effect of reducing theinterconnection impedance between the bumps and a supporting substrateand substantially eliminating much of the electrical interference, dueto capacitive and inductive coupling, between adjacent bumps. The bumps630 are plated to the conductive pads 640/645. However, alternately,solder balls or solid core solder balls may be coupled to the pads650/655. If it is desired to have a particular bump 630 electricallygrounded, at least one conductive region 650 will be provided to couplethe pad 640 to the ground layer 600. If it is not desired to have aparticular bump 630 electrically grounded to the ground layer 600, thebump pad 645 will be electrically isolated from the ground layer 600 byan isolation gap 660. Each pad 640/645 is then electrically coupled to aconductive lead on the second side of the flex circuit 620 by aconductive through hole or a blind via” 690, discussed in greater detailbelow. The compliant layer 610 is substantially identical to thecompliant layer 170 of FIG. 1 and is coupled to the second surface ofthe flex circuit 620 isolating the conductive leads 670 which arelithographically formed on the second surface of the flex circuit 620prior to coupling the compliant layer 610. Thus the conductive leads 670are isolated from any nonintended electrical connections. The flexcircuit 620 has been partially removed in FIG. 14 so that a portion oflead 670 may be viewed. A solder mask 680 is also applied to the exposedsurface of the ground layer 600 so that the bumps 630 may besoldered/connected to respective contacts on a supporting substratewithout causing an electrical short between the bumps 630.

FIG. 15 shows a side view of a similar embodiment to that shown in FIG.14 before the bumps are plated or soldered to the pads 640/645. As canbe seen, pad 640 is electrically connected to the ground plane 600,while pad 645 is electrically isolated from the ground plane 600 by thecombination of the isolation gap 660 and the flexible, dielectric soldermask 680 which covers the ground plane 600 and fills the isolation gap660. In the embodiment shown in FIG. 15, the identical function ofconductive through hole 690 of FIG. 14 is accomplished by using aconductive via or well on the pads 640/645 so that the back side of thewell is in electrical contact with the lithographically formed firstconductive leads 670A-B on the first flex circuit 720 and the secondflex circuit 730. The second conductive leads 740/750 are coupled to thefirst conductive leads and are initially suspended within the bondinggap 770. The second conductive leads 740/750 are then separated at theirrespective detachment points and bonded to the die bond pads 760, asdescribed in reference to FIGS. 4-8. A first side of the compliant layer610 is adhered to the second surface of the first and second flexcircuits 720/730 and further adhered to the protective structure 710 andthe die 700 on its second surface.

FIG. 16 shows a side view of a multiple circuit level embodiment of theembodiment shown in FIG. 15 before the bumps are plated or soldered tothe pads 800/805. As in FIG. 15, the ground layer 810 is electricallycoupled to pad 805, but is electrically isolated from pad 800. Pad 800is further electrically coupled to multiple circuit layers comprised ofconductive leads 820/830 which have been coupled, typically through alithographic process, to either surface of flex circuit 840. However,multiple single sided flex circuits could also be used or the lead 820could be formed on the second surface of flex circuit 860. Flex circuit840 is laminated to flex circuit 860 by an adhesive 870. An electricalconnection may be from the lead 820 on the first surface of flex circuit840 to lead 830 on the second surface of the flex circuit 840 by aconductive through hole or by a via solution, as described above.Conductive leads 830/880 are initially suspended within the bonding gap890. The leads 830/880 are then separated at their respective detachmentpoints and bonded to the die bond pads 900, as described in reference toFIGS. 4-8.

Having fully described several embodiments of the present invention, itwill be apparent to those of ordinary skill in the art that numerousalternatives and equivalents exist that do not depart from the inventionset forth above. It is therefore to be understood that the presentinvention is not to be limited by the foregoing description, but only bythe appended claims.

1. A method of packaging a semiconductor chip, comprising the steps of:providing a film having a plurality of leads and terminals thereon, eachsaid lead including a bond region, the bond regions of the leads beingconnected to the terminals so that at least one bond region is connectedto at least one terminal by a lead connecting region; juxtaposing thefilm with a die having a plurality of contacts and bonding the bondregions to the contacts of the die using a bonding tool; and selectivelyseparating one or more of the connecting regions by physically engagingthe mechanical bonding tool with one or more of the connecting regionsso as to leave some of the terminals connected to the contacts and otherterminals unconnected.
 2. The method as claimed in claim 1 wherein,prior to said selectively separating step, at least one bond region isconnected to a plurality of terminals by a plurality of lead connectingregions.
 3. The method as claimed in claim 1 wherein said selectivelyseparating step is performed so as to leave each said at least one bondregion connected to only one of said terminals.
 4. A method of packaginga semiconductor chip, comprising the steps of: providing a dielectricelement having a plurality of leads and terminals thereon, each saidlead including a bond region and at least one connecting region, thebond regions of the leads being connected to the terminals through theconnecting regions so that a first one of said bond regions is connectedto a plurality of said terminals by a plural set of said connectingregions; juxtaposing the dielectric element with a die having aplurality of contacts and connecting the bond regions to the contacts ofthe die; selectively severing one or more of the connecting regions ofsaid plural set by breaking said one or more connecting regions of saidplural set by physically engaging a tool with said one or moreconnecting regions so as to leave less than all of said plurality ofterminals connected to said first bond region.
 5. A method as claimed inclaim 4 wherein said selectively severing step is performed after saidjuxtaposing step.
 6. A method as claimed in claim 5 wherein saidselectively severing step is performed after said step of connectingsaid bond regions to said contacts of said chip.
 7. A method as claimedin claim 4 wherein said connecting regions of said plural set extendacross a disconnection window in said dielectric element, and whereinsaid step of breaking said one or more connecting regions of said pluralset includes forcing the tool into the disconnection window.
 8. A methodas claimed in claim 4 wherein said connecting regions of said plural setincorporate weak points and said breaking step includes breaking saidone or more connecting regions of said plural set at the weak points. 9.A method as claimed in claim 4 wherein said step of connecting the bondregions to the contacts of the die is performed by engaging said toolwith said bond regions and forcing the bond regions into engagement withthe contacts of the chip using said tool.
 10. A method as claimed inclaim 9 wherein said connecting regions of said plural set extend acrossa disconnection window in said dielectric element, and wherein said stepof breaking said one or more connecting regions of said plural setincludes forcing said tool into the disconnection window.
 11. A methodas claimed in claim 4 wherein said dielectric element includes aflexible dielectric film.
 12. A method as claimed in claim 11 whereinsaid juxtaposing step includes providing a layer between said film andsaid chip.